p p j u 2 na 1k / pj d 2 na 1k / pj p 2 na 1k / pj f 2 na 1k august 3,2015 - rev.0 0 page 1 9 00 v n - c hannel mosfet v oltage 10 0 0 v c urrent 2 a ito - 220ab - f to - 220ab to - 252 to - 251ab f eatures ? r ds(on) , v gs @10v,i d @ 1 a < 9 ? high switching speed ? improve d dv/dt capability ? low gate charge ? low reverse transfer capacitance ? lead free in compliance with eu rohs 2011/65/eu directive. ? green molding compound as per iec61249 std. (halogen free) m echanical data ? case : to - 251ab,to - 252 ,to - 220ab, ito - 220ab - f pa ckage ? terminals : solderable per mil - std - 750, method 2026 ? to - 251ab approx. weight : 0.0104 ounces, 0.297grams ? to - 252 approx. weight : 0.0104 ounces, 0.297grams ? to - 220ab approx. weight : 0.06 67 ounces, 1.8 9 grams ? ito - 220ab - f approx. weight : 0.068 ounces, 2 grams m aximum r atings and t hermal c haracteristics (t a =25 o c unless otherwise noted) parameter symbol to - 251ab to - 220ab ito - 220ab - f to - 252 units drain - source voltage v ds 10 00 v gate - source voltage v gs + 30 v continuous drain current i d 2 a pul sed drain current i dm 8 a single pulse avalanche energy (note 1 ) e as 148 mj power dissipation t c =25 o c p d 50 80 39 50 w derate above 25 o c 0.4 0.64 0.31 0.4 w/ o c operating junction and storage temperature range t j ,t stg - 55~150 o c typical thermal r esistance - junction to case - j unction to ambient r jc ja 2.5 110 1.56 62.5 3.2 1 120 2.5 110 o c /w ? limited only by maximum junction temperature
p p j u 2 na 1k / pj d 2 na 1k / pj p 2 na 1k / pj f 2 na 1k august 3,2015 - rev.0 0 page 2 e lectrical c haracteristics (t a =25 o c unless otherwise noted) parameter symbol test condition min. t yp. max. units static drain - source breakdown voltage bv dss v gs =0v,i d =250ua 1 000 - - v gate threshold voltage v gs(th) v ds =v gs ,i d =250ua 2 3.2 4 v drain - source on - state resistance r ds(on) v gs =10v,i d = 1 a - 7 . 6 9 dss v ds = 1 0 00v,v gs =0v - 0.03 1 .0 ua gate - source leakage current i gss v gs = + 30 v,v ds =0v - + 10 + 100 na diode forward voltage v sd i s = 2 a,v gs =0v - 0. 8 1. 7 v dynamic (note 4 ) total gate charge q g v ds = 80 0 v, i d = 2 a, v gs = 10 v (note 2 , 3 ) - 1 4 - nc gate - source charge q gs - 2 . 9 - gate - drain charge q gd - 7.9 - input capacitance ciss v ds =25v, v gs =0v, f=1.0mhz - 3 85 - pf output capacitance coss - 4 2 - reverse transfer capacitance crss - 8 - turn - on delay time td (on) v dd = 50 0 v, i d = 1 a, r g = 25 (note 2 , 3 ) - 10 - ns turn - on rise time t r - 2 3 - turn - off delay time td (off) - 37 - turn - off fall time t f - 34 - drain - source diode maximum continuous drain - source diode forward current i s --- - - 2 a maximum pulsed drain - source diode forwa rd current i sm --- - - 8 a reverse recovery time trr v gs =0v, i s = 2 a di f / dt=100a/us (note 2 ) - 647 - ns reverse recovery charge qrr - 1. 77 - uc notes : 1. l=30mh, i as = 3 .1 a, v dd = 5 0 v, r g = 2 5 ohm, starting t j =25 o c 2. pulse width < 300us, duty cycle < 2% 3. essentially i ndependent of operating temperature typical characteristics . 4. guaranteed by design, not subject to product ion testing
p p j u 2 na 1k / pj d 2 na 1k / pj p 2 na 1k / pj f 2 na 1k august 3,2015 - rev.0 0 page 3 t ypical characteristic curves fig.1 output characteristics fig. 2 transfer characteristics fig. 3 on - resistance vs. dra in current fig. 4 on - resistance vs. junction temperature fig. 5 capacitance vs. drain - source voltage fig. 6 source - drain diode forward voltage
p p j u 2 na 1k / pj d 2 na 1k / pj p 2 na 1k / pj f 2 na 1k august 3,2015 - rev.0 0 page 4 t ypical characteristic curves fig. 7 gate charge fig. 8 bv dss vs. junction temperatur e fig. 9 threshold voltage variation with temperature fig. 10 maximum safe operating area fig. 11 maximum safe operating area fig. 1 2 maximum safe operating area
p p j u 2 na 1k / pj d 2 na 1k / pj p 2 na 1k / pj f 2 na 1k august 3,2015 - rev.0 0 page 5 t ypical characteristic curves fig. 13 pju/pjd normalized transient thermal impedance vs. pulse width fig. 14 pjp 2 na 9 0 normalized transient thermal impedance vs. pulse width fig. 15 pjf 2na90 normalized transient thermal impedance vs. pulse width
p p j u 2 na 1k / pj d 2 na 1k / pj p 2 na 1k / pj f 2 na 1k august 3,2015 - rev.0 0 page 6 packaging information . ito - 220ab - f dimension u nit: mm to - 220 ab dimension u nit: mm to - 252 dimension u nit: mm to - 251ab dimension u nit: mm
p p j u 2 na 1k / pj d 2 na 1k / pj p 2 na 1k / pj f 2 na 1k august 3,2015 - rev.0 0 page 7 part no packing code version part n o packing code package type packing type marking ver sion pj u2na1k _t0_00001 to - 2 51ab 80pcs / tube u2na 1k halogen free pjd2na 1k _l2_00001 to - 252 3,000pcs / 13
p p j u 2 na 1k / pj d 2 na 1k / pj p 2 na 1k / pj f 2 na 1k august 3,2015 - rev.0 0 page 8 disclaimer
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